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Si860x
Table 9. IEC 60747-5-2 Insulation Characteristics for Si86xxxx*
Characteristic
Parameter
Symbol
Test Condition
WB
NB SOIC-8
Unit
SOIC-16
SOIC-16
Maximum Working Insulation
Voltage
V IORM
1200
630
Vpeak
Method b1
Input to Output Test Voltage
V PR
(V IORM x 1.875 = V PR , 100%
Production Test, t m = 1 sec,
2250
1182
Vpeak
Partial Discharge < 5 pC)
Transient Overvoltage
V IOTM
t = 60 sec
6000
6000
Vpeak
Pollution Degree
(DIN VDE 0110, Table 1)
2
2
Insulation Resistance at T S ,
V IO = 500 V
R S
>10 9
>10 9
?
*Note: Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of
40/125/21.
Table 10. IEC Safety Limiting Values 1
Parameter
Symbol
Test Condition
NB NB
SOIC-8 SOIC-16
WB
SOIC-16
Unit
Case Temperature
T S
150
150
150
°C
? JA = 100 °C/W (WB SOIC-16),
105 °C/W (NB SOIC-16), 140 °C/W
Safety Input Current
I S
(NB SOIC-8)
160
210
220
mA
AVDD, BVDD = 5.5 V,
T J = 150 °C, T A = 25 °C
Device Power Dissipation 2
P D
220
275
275
W
Notes:
1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figures 4, 5, and 6.
2. The Si86xx is tested with AVDD, BVDD = 5.5 V; T J = 150 oC; C 1 , C 2 = 0.1 μF; C 3 = 15 pF; R1, R2 = 3k ??? input 1 MHz
50% duty cycle square wave.
12
Rev. 1.3
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